Module 1
Energy bands and charge carriers in semiconductors: energy bands- metals- semiconductors and insulators- direct and indirect semiconductors- charge carriers in semiconductors: electrons and holes- intrinsic and extrinsic material- n-material and p-material- carrier concentration: fermi level- EHPs- temperature dependance- conductivity and mobility- drift and resistance- effect of temperature and doping on mobility- hall effect.
Energy bands and charge carriers in semiconductors: energy bands- metals- semiconductors and insulators- direct and indirect semiconductors- charge carriers in semiconductors: electrons and holes- intrinsic and extrinsic material- n-material and p-material- carrier concentration: fermi level- EHPs- temperature dependance- conductivity and mobility- drift and resistance- effect of temperature and doping on mobility- hall effect.
Module 2
Diffusion of carriers- derivation of diffusion constant D- Einstein relation- continuity equation- p-n junctions: contact potential- equilibrium fermi levels- space charge at junctions- current components at a junction: majority and minority carrier currents- zener and avalanche breakdown- capacitance of p-n junctions.
Diffusion of carriers- derivation of diffusion constant D- Einstein relation- continuity equation- p-n junctions: contact potential- equilibrium fermi levels- space charge at junctions- current components at a junction: majority and minority carrier currents- zener and avalanche breakdown- capacitance of p-n junctions.
Module 3
p-n junction diodes: volt-ampere characteristics- switching time- rectifier action- Zener diodes: volt-ampere characteristics- Tunnel diodes: tunneling phenomena- volt-ampere characteristics- Varactor diodes- Photo diodes: detection principle- light emitting diodes.
p-n junction diodes: volt-ampere characteristics- switching time- rectifier action- Zener diodes: volt-ampere characteristics- Tunnel diodes: tunneling phenomena- volt-ampere characteristics- Varactor diodes- Photo diodes: detection principle- light emitting diodes.
Module 4
Bipolar junction transistors: npn and pnp transistor action- open circuited transistor- biasing in active region- majority and minority carrier distribution- terminal currents- amplification and switching- a and ß gain factors- emitter efficiency ?- schottky transistors- photo transistors.
Bipolar junction transistors: npn and pnp transistor action- open circuited transistor- biasing in active region- majority and minority carrier distribution- terminal currents- amplification and switching- a and ß gain factors- emitter efficiency ?- schottky transistors- photo transistors.
Module 5
Field effect transistors: operation- pinch off and saturation- pinch off voltage- gate control- volt-ampere characteristics- MOSFETS: n MOS and p MOS: comparison- enhancement and depletion types- control of threshold voltage- MOS capacitance.
Field effect transistors: operation- pinch off and saturation- pinch off voltage- gate control- volt-ampere characteristics- MOSFETS: n MOS and p MOS: comparison- enhancement and depletion types- control of threshold voltage- MOS capacitance.
mgu university b.tech syllabus
References
1. Solid state electronic devices – Ben G Streetman- Pearson Education
2. Microelectronic Devices: Nagchaudhari, Pearson Education
3. Integrated electronics – Millman and Halkias- Mc Graw Hill.
4. Physics of semiconductor devices – S M Sze- Mc Graw Hill.
5. Semiconductor devices – Nagchoudhary- Tata Mc Graw Hill.
6. Physics of semiconductor devices: Shur- PHI.
7. Theory of Semiconductor devices: Karl Hess- PHI.
2. Microelectronic Devices: Nagchaudhari, Pearson Education
3. Integrated electronics – Millman and Halkias- Mc Graw Hill.
4. Physics of semiconductor devices – S M Sze- Mc Graw Hill.
5. Semiconductor devices – Nagchoudhary- Tata Mc Graw Hill.
6. Physics of semiconductor devices: Shur- PHI.
7. Theory of Semiconductor devices: Karl Hess- PHI.